Effect of Mg doping on the electrical characteristics of high performance IGZO Thin Film Transistors

Hung Chi Wu, Tung Sheng Liu, Chao-Hsin Chien

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this work, we report that the electrical characteristics of Indium-Gallium-Zinc-Oxide Thin Film Transistors (IGZO-TFTs) can be improved by Mg doping in the IGZO layer. Several composite IGZO/Mg-doped IGZO channel structures were employed. With appropriate Mg-doped IGZO thickness, the electrical properties such as mobility, subthreshold swing (S.S.) and on/off ratio can be significantly improved by Mg doping. Mg doping in IGZO layer can stabilize device performance whatever the device is stressed under positive gate bias or negative gate bias with illumination. By X-ray photoelectron (XPS) analysis, we observe the presence of Mg can change the oxygen bonding states and influence the properties of IGZO layer. The atomic percentage of Mg in the IGZO layer is about 6.53%. As a result, Mg doping is a useful method to enhance the performance and stability of IGZO-TFTs.

原文English
期刊ECS Journal of Solid State Science and Technology
3
發行號2
DOIs
出版狀態Published - 17 二月 2014

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