Effect of interdot Coulomb repulsion on charge transport of parallel two single-electron transistors

David M.T. Kuo*, Pei-Wen Li

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The charge transport behaviors of two single-electron transistors (SETs) sitting in parallel are investigated using the Anderson model with two impurity levels. Interdot Coulomb interactions as well as intradot Coulomb interactions are included in the model. The nonequilibrium Keldysh-Green's function technique is used to calculate the current-voltage characteristics of this system. Considering the lowest order coupling between dots and electrodes, analytic spectral functions are calculated using the equation of motion method. We found that the interdot Coulomb interactions not only lead to interdot Coulomb blockade effects but also create negative differential conductances. In addition, the hysteretic effects arising from interface traps or defects are also investigated. SETs could be good detectors for determining interface acceptor-type or donor-type traps of quantum dots (QDS).

原文English
頁(從 - 到)2881-2887
頁數7
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號4 A
DOIs
出版狀態Published - 7 四月 2006

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