Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue lightemitting diodes

Sheng Wen Wang, Da Wei Lin, Chia Yu Lee, Che Yu Liu, Yu-Pin Lan, Hao-Chung Kuo*, Shing Chung Wang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs).The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.

原文English
主出版物標題CLEO
主出版物子標題Science and Innovations, CLEO_SI 2013
出版狀態Published - 18 十一月 2013
事件CLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
持續時間: 9 六月 201314 六月 2013

出版系列

名字CLEO: Science and Innovations, CLEO_SI 2013

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2013
國家United States
城市San Jose, CA
期間9/06/1314/06/13

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