Effect of high-pressure H2O treatment on elimination of interfacial GeOX layer between ZrO2 and Ge stack

Chen Shuo Huang, Po-Tsun Liu*

*Corresponding author for this work

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

This investigation demonstrates the effect of high-pressure H2O treatment on the elimination of the interfacial germanium suboxide (GeO X) layer between ZrO2 and Ge. The formation of GeO X interlayer increases the gate-leakage current and worsen the controllability of the gate during deposition or thermal cycles. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy reveal that high-pressure H2O treatment eliminates the interfacial GeOX layer. The physical mechanism involves the oxidation of non-oxidized Zr with H2O and the reduction of GeOX by H2. Treatment with H2O reduces the gate-leakage current of a ZrO2/Ge capacitor by a factor of 1000.

原文English
文章編號082907
期刊Applied Physics Letters
99
發行號8
DOIs
出版狀態Published - 22 八月 2011

指紋 深入研究「Effect of high-pressure H<sub>2</sub>O treatment on elimination of interfacial GeO<sub>X</sub> layer between ZrO<sub>2</sub> and Ge stack」主題。共同形成了獨特的指紋。

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