Effect of GaAs substrate misorientation on InxGa 1 - XAs crystalline quality and photovoltaic performance

Ming Chun Tseng, Ray-Hua Horng*, Dong Sing Wuu, Yu Li Tsai, Chia Hao Kuo, Snin Nan Lin, Hsin Her Yu

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This paper presents the quality of InxGa1 - xAs (0 < x < 0.2) layers grown on GaAs substrate with different miscut angle (2° and 15°) by metal organic chemical vapor deposition. The crystalline quality of InxGa1 - xAs layers was found to strongly depend on indium content and substrate misorientation. The In 0.16Ga0.84As solar cells with PN structure were grown on a 2°- and 15°-off GaAs substrates. It was found that the photovoltaic performance of In0.16Ga0.84As solar cell grown on 2°-off GaAs substrate was better than that of In0.16Ga 0.84As grown on a 15°-off GaAs substrate, because the In xGa1 - xAs films grown on 15°-off GaAs substrate shows a highly strain relaxation in active layer of solar cell, which causes the high dislocation density at the initial active layer/InxGa 1 - xAs graded layer interface.

原文English
頁(從 - 到)7213-7217
頁數5
期刊Thin Solid Films
518
發行號24
DOIs
出版狀態Published - 1 十月 2010

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