Effect of diamond like carbon layer on heat dissipation and optoelectronic performance of vertical-type InGaN light emitting diodes

Ray-Hua Horng*, Wei Cheng Kao, Sin Liang Ou, Dong Sing Wuu

*Corresponding author for this work

研究成果: Article

13 引文 斯高帕斯(Scopus)

摘要

This study reports the transfer of InGaN light-emitting diodes (LEDs) embedded with and without a diamond like carbon (DLC) layer to Si substrates. It also investigates the heat dissipation and output power performance after the addition of the DLC layer. The LED device with a DLC layer had a lower thermal resistance (13.2 K/W) and surface temperature (55.51-65.34 °C at 700 mA) than that without a DLC layer. This likely resulted from the fast heat dissipation of the DLC layer in both vertical and horizontal directions. The LED device with a DLC layer achieved a 20.8 improvement in output power.

原文English
文章編號171102
期刊Applied Physics Letters
101
發行號17
DOIs
出版狀態Published - 22 十月 2012

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