Effect of annealing temperature on physical and electrical properties of Bi3.25La0.75Ti3O12 thin films on Al2O3-buffered Si

Chia Liang Sun*, San-Yuan Chen, Shi Bai Chen, Albert Chin

*Corresponding author for this work

研究成果: Article

44 引文 斯高帕斯(Scopus)

摘要

The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi3.25La 0.75Ti3O12 (BLT) thin films on Al 2O3 (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/Al2O3/Si capacitors annealed at temperature range of 700°C-950°C increases with increasing annealing temperature. At the highest annealing temperature of 950°C, a large ferroelectric memory window of 13 V is obtained under ±15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/Al2O3/Si capacitor is compatible with current very large scale integrated technology process.

原文English
頁(從 - 到)1984-1986
頁數3
期刊Applied Physics Letters
80
發行號11
DOIs
出版狀態Published - 18 三月 2002

指紋 深入研究「Effect of annealing temperature on physical and electrical properties of Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub> thin films on Al<sub>2</sub>O<sub>3</sub>-buffered Si」主題。共同形成了獨特的指紋。

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