We show using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary RthCth circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with Tsi, Tbox, Tox, W, and L.
|頁（從 - 到）||114-115|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 一月 1998|
|事件||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
持續時間: 9 六月 1998 → 11 六月 1998