Dynamic depletion SOI MOSFET model for SPICE

Dennis Sinitsky*, Samuel Fung, Stephen Tang, Pin Su, Mansun Chan, Ping Ko, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We show using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary RthCth circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with Tsi, Tbox, Tox, W, and L.

原文English
頁(從 - 到)114-115
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 一月 1998
事件Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
持續時間: 9 六月 199811 六月 1998

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