Dual-wavelength mode-locking of novel chirped multilayer quantum-dot lasers

Chun Ping Chiang, Kuo-Jui Lin*, Yu Chen Chen, Hsu Chieh Cheng

*Corresponding author for this work

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Monolithic passively mode-locked lasers are investigated based on chirped multilayer InAs/InGaAs QDs. Three chirped wavelengths, with stacking numbers of 2, 3 and 5 layers, are designed with capped InGaAs thickness of 4, 3 and 1 nm, respectively. The ridge-waveguide devices of 5-μm width and 3-mm length are fabricated to have absorber-to-gain length ratio of 1:9. A curve tracer is used to analyze the hysteresis on the light-current curve. Two kinks in the L-I curve are observed at threshold current near 50 mA and at higher current of about 150 mA. The lasing wavelength just above threshold is centered at 1268 nm and the RF spectrum of mode-locking is peaked at 13.32 GHz. At well above threshold of 200 mA, another RF peak at 13.21 GHz occurs that corresponds to shorter lasing wavelength around 1233 nm. The two lasing wavelengths are originated from ground-state transitions of two groups of InAs/InGaAs QDs. Simultaneous dual-wavelength mode-locking is therefore achieved at rather low forward current and low reverse bias by incorporating this novel design of QD structure.

原文English
主出版物標題Nanophotonic Materials XIII
編輯Gilles Lerondel, Taleb Mokari, Adam M. Schwartzberg, Stefano Cabrini
發行者SPIE
ISBN(電子)9781510602298
DOIs
出版狀態Published - 1 一月 2016
事件Nanophotonic Materials XIII - San Diego, United States
持續時間: 30 八月 201631 八月 2016

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9919
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceNanophotonic Materials XIII
國家United States
城市San Diego
期間30/08/1631/08/16

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