Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin*, Ming-Dou Ker

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

原文English
主出版物標題ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
頁面707-709
頁數3
DOIs
出版狀態Published - 1 十二月 2010
事件2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 1 十一月 20104 十一月 2010

出版系列

名字ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間1/11/104/11/10

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