Our study shows that the isolation-degradation in semi-insulating GaAs substrate is closely related to dry processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semi-insulating GaAs, could be passivated by plasma-assisted etchings or depositions. The passivation of EL2 causes surface leakage and leads to crosstalk in GaAs ICs.
|主出版物標題||Materials Research Society Symposia Proceedings|
|編輯||Noble M. Johnson, Stephen G. Bishop, George D. Watkins|
|發行者||Materials Research Soc|
|出版狀態||Published - 1 十二月 1985|
|名字||Materials Research Society Symposia Proceedings|