@inproceedings{74a8dcefe7434fb2bd25eff9f52f3404,
title = "DRY-PROCESSING INDUCED ISOLATION-DEGRADATION IN GaAs INTEGRATED CIRCUITS.",
abstract = "Our study shows that the isolation-degradation in semi-insulating GaAs substrate is closely related to dry processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semi-insulating GaAs, could be passivated by plasma-assisted etchings or depositions. The passivation of EL2 causes surface leakage and leads to crosstalk in GaAs ICs.",
author = "Mau-Chung Chang and Lee, {C. P.} and Sheng, {N. H.} and Kirkpatrick, {C. G.} and Chen, {R. T.}",
year = "1985",
month = dec,
day = "1",
doi = "10.1557/PROC-46-415",
language = "English",
isbn = "0931837111",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "415--418",
editor = "Johnson, {Noble M.} and Bishop, {Stephen G.} and Watkins, {George D.}",
booktitle = "Materials Research Society Symposia Proceedings",
}