DRY-PROCESSING INDUCED ISOLATION-DEGRADATION IN GaAs INTEGRATED CIRCUITS.

Mau-Chung Chang*, C. P. Lee, N. H. Sheng, C. G. Kirkpatrick, R. T. Chen

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Our study shows that the isolation-degradation in semi-insulating GaAs substrate is closely related to dry processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semi-insulating GaAs, could be passivated by plasma-assisted etchings or depositions. The passivation of EL2 causes surface leakage and leads to crosstalk in GaAs ICs.

原文English
主出版物標題Materials Research Society Symposia Proceedings
編輯Noble M. Johnson, Stephen G. Bishop, George D. Watkins
發行者Materials Research Soc
頁面415-418
頁數4
ISBN(列印)0931837111
DOIs
出版狀態Published - 1 十二月 1985

出版系列

名字Materials Research Society Symposia Proceedings
46
ISSN(列印)0272-9172

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