Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

Kow-Ming Chang; T. H. Yeh; S. W. Wang; C. H. Li; J. Y. Yang

doi:10.1016/0254-0584(96)80042-3

Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

Kow-Ming Chang^*, T. H. Yeh, S. W. Wang, C. H. Li, J. Y. Yang

^*Corresponding author for this work

國立交通大學

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl₂/HBr/O₂ mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

原文	English
頁（從 - 到）	22-26
頁數	5
期刊	Materials Chemistry and Physics
卷	45
發行號	1
DOIs	https://doi.org/10.1016/0254-0584(96)80042-3
出版狀態	Published - 1 一月 1996

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10.1016/0254-0584(96)80042-3

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引用此

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abstract = "Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.",

keywords = "Chlorine-based plasmas, Electron cyclotron resonance, Polysilicon etching",

author = "Kow-Ming Chang and Yeh, {T. H.} and Wang, {S. W.} and Li, {C. H.} and Yang, {J. Y.}",

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T1 - Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor

AU - Chang, Kow-Ming

AU - Yeh, T. H.

AU - Wang, S. W.

AU - Li, C. H.

AU - Yang, J. Y.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

AB - Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl2/HBr/O2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.

KW - Chlorine-based plasmas

KW - Electron cyclotron resonance

KW - Polysilicon etching

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JO - Materials Chemistry and Physics

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