Double photonic quasi-crystal structure effect on GaN-based vertical-injection light-emitting diodes

Hung Wen Huang*, Chung Hsiang Lin, Zhi Kai Huang, Kang Yuan Lee, Chang Chin Yu, Hao-Chung Kuo

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 × 350 μm2, our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface.

原文English
文章編號022101
期刊Japanese Journal of Applied Physics
49
發行號2 Part 1
DOIs
出版狀態Published - 1 二月 2010

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