Doping of monolayer graphene for silicon based Schottky junction solar cells

Yi Chun Lai, Bing Shu Wu, Shu Cheng Yu, Peichen Yu, Gou Chung Chi

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Silicon-based hybrid solar cells have garnered extensive attentions in the photovoltaics industry due to easy processing attributes and high optical absorption and outstanding carrier mobility of silicon. Among all, indium tin oxide (ITO)/silicon solar cells have achieved a power conversion efficiency of 13% due to excellent conductivity, transmittance and applicable surface potential of ITO. However, the cost of ITO has risen significantly recently due to the deficiency of indium. Therefore, graphene has been an inexpensive alternative to ITO. For solar cell applications, graphene plays an important role as transparent electrodes (TE) with tunable work functions for efficient carrier collection. Therefore, graphene-based Schottky junction solar cells (SJSC) on crystalline silicon thin films hold great promises for low-cost photovoltaics owing to potentials for high efficiency and rapid production on flexible substrates. According to previous reports, the key factors to achieve a highly efficient SJSC include excellent transparence and conductance, as well as tunable work functions. Herein, we demonstrate a single layer graphene/n-Si Schottky junction solar cell that exhibits a power conversion efficiency (PCE) of 1.2 % under one-sun AM 1.5G illumination, and an integrated short-circuit photocurrent of 18.3 mA/cm2 from the external quantum efficiency measurement. The transmittance of the monolayer graphene in this device is over 97 % and the sheet resistance is around 800 to 1200 Ω/□. Furthermore, we investigate a doping method involving bis(trifluoromethanesulfonyl)-amid (TFSA) for the monolayer graphene to improve the separation and collection of photogenerated carriers in the SJSC. The preliminary data show that the sheet resistance is decreased rapidly from 1200 to 300 Ω/□. and the surface potential is also adjusted by the chemical doping. Currently, device fabrication with doped monolayer graphene is still in process and complete characterization data will be presented.

原文English
主出版物標題39th IEEE Photovoltaic Specialists Conference, PVSC 2013
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2436-2438
頁數3
ISBN(列印)9781479932993
DOIs
出版狀態Published - 1 一月 2013
事件39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
持續時間: 16 六月 201321 六月 2013

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
國家United States
城市Tampa, FL
期間16/06/1321/06/13

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