Dopant diffusion in silicon substrate during oxynitride process

N. Aoki*, T. Yaegashi, Y. Takeuchi, M. Fujiwara, N. Kusunoki, T. Sato, I. Mizushima, Y. Tsunashima, H. Hazama, S. Aritome, Shirota Riichiro, T. Shimizu

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We found an anomalous behavior of dopant diffusion in Si substrate during the oxynitride process. SIMS measurements showed a notably enhanced diffusion during the NO and N2O oxynitride process. The considerably enhanced diffusion was also observed in re-oxidation of oxynitride film grown by the NO annealing or NH3 nitridation of a SiO2 film. In order to simulate the enhanced diffusion, an enhancement coefficient was introduced, showing that the simulation results are in reasonable agreement with the experimental ones. We applied the diffusion model to the simulations of MOSFETs fabricated under various conditions of the oxynitride process. The device characteristics of MOSFETs were successfully reproduced by adopting a suitable dependence of nitrogen concentration CN on the surface recombination rate of interstitial Si at the oxynitride/Si substrate interface.

原文English
期刊Materials Research Society Symposium - Proceedings
610
DOIs
出版狀態Published - 1 十二月 2000
事件Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
持續時間: 24 四月 200027 四月 2000

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