Domain wall conductivity in La-doped BiFeO3

J. Seidel*, P. Maksymovych, Y. Batra, A. Katan, S. Y. Yang, Q. He, A. P. Baddorf, S. V. Kalinin, C. H. Yang, J. C. Yang, Ying-hao Chu, E. K.H. Salje, H. Wormeester, M. Salmeron, R. Ramesh

*Corresponding author for this work

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295 引文 斯高帕斯(Scopus)

摘要

The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO3) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.

原文English
文章編號197603
頁數3
期刊Physical Review Letters
105
發行號19
DOIs
出版狀態Published - 5 十一月 2010

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