Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

Yin Nien Chen*, Chien Yu Hsieh, Ming Long Fan, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the stacking-like property of split-gate super-high-V T FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported 6T-Column-Decoupled cell using TCAD mixed-mode simulations. 3D atomistic mixed-mode Monte-Carlo simulations are performed to investigate the impact of local random variations due to Fin LER. The results indicate that the proposed cell shows better cell stability and provides sufficient margins even considering intrinsic device variations.

原文English
主出版物標題Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
頁面34-37
頁數4
DOIs
出版狀態Published - 11 七月 2011
事件2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
持續時間: 25 四月 201127 四月 2011

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
國家Taiwan
城市Hsinchu
期間25/04/1127/04/11

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