Distortion simulation of 90 nm nMOSFET for RF applications

Xuemei Xi, Kanyu Cao, Xiaodong Jin, Hui Wan, Mansun Chan, Chen-Ming Hu

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.

原文English
主出版物標題2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
編輯Hiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
發行者Institute of Electrical and Electronics Engineers Inc.
頁面247-250
頁數4
ISBN(電子)0780365208, 9780780365209
DOIs
出版狀態Published - 1 一月 2001
事件6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
持續時間: 22 十月 200125 十月 2001

出版系列

名字2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
1

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
國家China
城市Shanghai
期間22/10/0125/10/01

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