Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors

Yiming Li*, Chih Hong Hwang

*Corresponding author for this work

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

The effect of the number and position of discrete dopants on device characteristics is crucial in determining the behavior of nanoscale semiconductor devices. We explore the fluctuations of threshold voltage (V th) roll-off in nanoscale bulk fin-type field effect transistors (FinFETs) by a three-dimensional (3D) statistically full-scale "atomistic" device simulation technique. The explored devices are of three different dimensions: 16, 22, and 30 nm3. Discrete dopants are statistically positioned into the 3D channel region to explore associated carrier transport characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". For the device with a gate length of 16 nm, the Vth fluctuation of FinFETs is only half that of planar metal - oxide - semiconductor (MOS) FET. Compared with planar MOSFETs, the bulk FinEFTs can significantly suppress the fluctuation of Vth roll-off. The standard deviation of Vth is proportional to (WL)-25, which is better than the (WL) -0.5 of planar devices. The superior immunity against fluctuation and the stable fluctuation of Vth roll-off indicate the bulk FinFET to be a promising device for the sub-16 nm technology era.

原文English
頁(從 - 到)2580-2584
頁數5
期刊Japanese journal of applied physics
47
發行號4 PART 2
DOIs
出版狀態Published - 25 四月 2008

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