Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

Leland Chang*, Kevin J. Yang, Yee Chia Yeo, Igor Polishchuk, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

77 引文 斯高帕斯(Scopus)

摘要

The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-κ gate dielectrics are discussed.

原文English
頁(從 - 到)2288-2294
頁數7
期刊IEEE Transactions on Electron Devices
49
發行號12
DOIs
出版狀態Published - 1 十二月 2002

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