This work describes a novel equivalent circuit representation for the modeling of low frequency 1/f noise in Heterojunction Bipolar Transistors (HBTs), and is presented as part of an extraction procedure which combines direct calculation of the HBT equivalent circuit from S-parameters, and separate measurement of the base and collector noise voltage spectra to determine the magnitude and physical location of dominant intrinsic 1/f noise sources within the device.
|頁（從 - 到）||1305-1308|
|期刊||IEEE MTT-S International Microwave Symposium Digest|
|出版狀態||Published - 1 一月 1996|
|事件||Proceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA|
持續時間: 17 六月 1996 → 21 六月 1996