Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao*, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.

原文English
文章編號052106
期刊Applied Physics Letters
90
發行號5
DOIs
出版狀態Published - 19 二月 2007

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