Diode-pumped passively Q-switched picosecond Nd:GDxY 1-xVO4 self-stimulated Raman laser

Yung-Fu Chen*, M. L. Ku, L. Y. Tsai, Y. C. Chen

*Corresponding author for this work

研究成果: Article同行評審

66 引文 斯高帕斯(Scopus)

摘要

An efficiency of 8.2% is demonstrated for a diode-pumped passively Q-switched self-stimulated Raman laser with an a-cut mixed vanadate crystal, Nd:Gd0.8Y0.2VO4. At 2.2 W of incident pump power, the self-stimulated Raman laser produces pulses as short as 660 ps at a Stokes wavelength of 1175 nm with 2.7 μJ of energy per pulse at a 66-kHz repetition rate.

原文English
頁(從 - 到)2279-2281
頁數3
期刊Optics Letters
29
發行號19
DOIs
出版狀態Published - 1 十月 2004

指紋 深入研究「Diode-pumped passively Q-switched picosecond Nd:GD<sub>x</sub>Y <sub>1-x</sub>VO<sub>4</sub> self-stimulated Raman laser」主題。共同形成了獨特的指紋。

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