Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs

Yin Chang Wei, Yi Chieh Li, I. Che Lee, Huang-Chung Cheng

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Typically, each element in a large-area flat-panel X-ray image sensor consists of a photodetector and amorphous silicon (a-Si) thin-film transistor (TFT) switches. In order to reduce noise, increase sensor dynamic range, and increase carrying capacity, the low-temperature polycrystallinesilicon (LTPS) TFTs have been proposed as a candidate to replace the a-Si TFTs. However, there are concerns regarding the impact of X-ray radiation in LTPS-TFTs, and several studies have been conducted to inquire into the same. In this paper, we show that LTPS TFTs with small channel length (<2 μm) are almost immune to X-ray radiation.

原文English
文章編號06GF07
期刊Japanese Journal of Applied Physics
56
發行號6
DOIs
出版狀態Published - 1 六月 2017

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