Diffusion of Co-sputtered metals as bonding materials for 3D interconnects during thermal treatments

S. Y. Hsu, H. Y. Chen, Kuan-Neng Chen*

*Corresponding author for this work

研究成果: Article同行評審

摘要

Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.

原文English
頁(從 - 到)2467-2471
頁數5
期刊Journal of Nanoscience and Nanotechnology
12
發行號3
DOIs
出版狀態Published - 3 七月 2012

指紋 深入研究「Diffusion of Co-sputtered metals as bonding materials for 3D interconnects during thermal treatments」主題。共同形成了獨特的指紋。

引用此