Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates

Y. Y. Chen*, Chao-Hsin Chien, J. C. Lou

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 1014 cm- 2 was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 1015 cm- 2 not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 μm technology node and beyond.

原文English
頁(從 - 到)264-268
頁數5
期刊Thin Solid Films
513
發行號1-2
DOIs
出版狀態Published - 14 八月 2006

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