Device structural effects on negative-capacitance FETs

Pin Su, Wei Xiang You

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper discusses several device structural effects on negative-capacitance FETs (NCFETs) with emphasis on the wide-range average subthreshold swing. We point out and explain the intrinsic difference between SOI and double-gate 2D NCFETs. The impact of drain coupling on the NC effect and its implication on the design of short-channel NC-FinFETs are also addressed.

原文English
主出版物標題2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781538676264
DOIs
出版狀態Published - 11 二月 2019
事件2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
持續時間: 15 十月 201818 十月 2018

出版系列

名字2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
國家United States
城市Burlingame
期間15/10/1818/10/18

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