Device models in FDTD analysis of microwave circuits

Chien-Nan Kuo*, Bijan Houshmand, Tatsuo Itoh

*Corresponding author for this work

研究成果: Paper同行評審

摘要

This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.

原文English
頁面467-470
頁數4
出版狀態Published - 1 十二月 1995
事件Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 - San Francisco, CA, USA
持續時間: 25 十月 199527 十月 1995

Conference

ConferenceProceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95
城市San Francisco, CA, USA
期間25/10/9527/10/95

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