This paper describes the investigation of two different approaches to model microwave active devices using the finite-difference time-domain (FDTD) analysis. Norton-equivalent and Thevenin-equivalent approaches are used in the extended FDTD method to model the interaction between the three-terminal active device and the electromagnetic field by placing equivalent sources in the active region. A typical microwave amplifier is analyzed, and the simulation results agree well with expectation.
|出版狀態||Published - 1 十二月 1995|
|事件||Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95 - San Francisco, CA, USA|
持續時間: 25 十月 1995 → 27 十月 1995
|Conference||Proceedings of the 1995 3rd URSI International Symposium on Signals, Systems and Electronics, ISSSE'95|
|城市||San Francisco, CA, USA|
|期間||25/10/95 → 27/10/95|