We report a very simple process to fabricate Al2O3 gate dielectric with K (9.0 to 9.8) greater than Si3N4. Al2O3 is formed by direct oxidation from thermally evaporated Al. The 48 angstrom Al2O3 has approx. 7 orders lower leakage current than equivalent 21 angstrom SiO2. Good Al2O3/Si interface was evidenced by the low interface density of 1×1011 eV cm-2 and compatible electron mobility with thermal SiO2. Good reliability is measured from the small SILC after 2.5 V stress for 10,000s.
|頁（從 - 到）||135-136|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 十二月 1999|
|事件||Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn|
持續時間: 14 六月 1999 → 16 六月 1999