Device and reliability of high-K Al2O3 gate dielectric with good mobility and low Dit

Albert Chin*, C. C. Liao, C. H. Lu, W. J. Chen, C. Tsai

*Corresponding author for this work

研究成果: Conference article同行評審

112 引文 斯高帕斯(Scopus)


We report a very simple process to fabricate Al2O3 gate dielectric with K (9.0 to 9.8) greater than Si3N4. Al2O3 is formed by direct oxidation from thermally evaporated Al. The 48 angstrom Al2O3 has approx. 7 orders lower leakage current than equivalent 21 angstrom SiO2. Good Al2O3/Si interface was evidenced by the low interface density of 1×1011 eV cm-2 and compatible electron mobility with thermal SiO2. Good reliability is measured from the small SILC after 2.5 V stress for 10,000s.

頁(從 - 到)135-136
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1 十二月 1999
事件Proceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 14 六月 199916 六月 1999

指紋 深入研究「Device and reliability of high-K Al<sub>2</sub>O<sub>3</sub> gate dielectric with good mobility and low D<sub>it</sub>」主題。共同形成了獨特的指紋。