Detailed characterization of a systematic set of quantum dot infrared photodetectors

H. C. Liu*, B. Aslan, M. Korkusinski, Shun-Jen Cheng, P. Hawrylak

*Corresponding author for this work

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated.

原文English
頁(從 - 到)503-508
頁數6
期刊Infrared Physics and Technology
44
發行號5-6
DOIs
出版狀態Published - 21 十月 2003

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