Designer Ge quantum-dot phototransistors for highly-integrated, broadband optical interconnects

Ming Hao Kuo, Chung Yen Chien, Po Hsiang Liao, Wei Ting Lai, Pei-Wen Li

研究成果: Conference contribution同行評審

摘要

We report high-responsivity Ge quantum dots (QDs) MOS phototransistors as on-chip transducers for highly-integrated, broadband Si-based optical interconnects. Self-organized heterostructure of Ge-QD/SiO2/Si-channel is fabricated in a single step through selective oxidation of SiGe nano-pillars over a Si3N4 buffer layer on Si substrates. Dark current densities (10-7A/mm2), photocurrent-to-dark current ratio (∼ 107) and photoresponsmties (>10 A/W), external quantum efficiency (∼240%), and response time (1.4ns) are measured on the Ge-QD phototransistors under 850 run illumination. Detection wavelength is tunable from near infrared to near ultraviolet by reducing the QD size from 90 to 7 nm, and the optimal photoresponsmty is tailored by the QD size and effective thickness of gate dielectrics.

原文English
主出版物標題7th IEEE International Nanoelectronics Conference 2016, INEC 2016
發行者IEEE Computer Society
ISBN(電子)9781467389693
DOIs
出版狀態Published - 12 十月 2016
事件7th IEEE International Nanoelectronics Conference, INEC 2016 - Chengdu, China
持續時間: 9 五月 201611 五月 2016

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
2016-October
ISSN(列印)2159-3523

Conference

Conference7th IEEE International Nanoelectronics Conference, INEC 2016
國家China
城市Chengdu
期間9/05/1611/05/16

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