Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li*, W. M. Liao

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects」主題。共同形成了獨特的指紋。

Physics & Astronomy

Chemical Compounds

Engineering & Materials Science