Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li*, W. M. Liao

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

原文English
頁(從 - 到)1030-1033
頁數4
期刊Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
20
發行號3
DOIs
出版狀態Published - 1 五月 2002

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