A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.
|頁（從 - 到）||1030-1033|
|期刊||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|出版狀態||Published - 1 五月 2002|