A Novel strained nMOSFET with embedded Si:C in S/D extension stressor (Si:C S/D-E) was presented. Comparing to the bulk device, it revealed good drive current I
(+27%), high I
current (+67%), enhanced channel mobility (+105%), at a lower effective substitutional carbon concentration (C%=1.1%), using the poly-gate 40nm-node Si:C/eSiGe S/D CMOS technology. Moreover, PBTI effect was first observed in this device as a result of Carbn impurity out-diffusion, which is of critically important for the design trade-off between performance and reliability.