Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process

Ying Chen, Zhong I. Yu, Ching Ying Huang, Kuan Han Hsieh, Shu-I Hu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

This paper describes our progress in designing the K-band receiver in WIN 0.15μm GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18∼26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000×2500μm2. A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured Tn is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.

原文English
主出版物標題2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings
編輯Idnin Pasya
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1250-1253
頁數4
ISBN(電子)9781538606407
DOIs
出版狀態Published - 8 一月 2018
事件2017 IEEE Asia Pacific Microwave Conference, APMC 2017 - Kuala Lumpur, Malaysia
持續時間: 13 十一月 201716 十一月 2017

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2017 IEEE Asia Pacific Microwave Conference, APMC 2017
國家Malaysia
城市Kuala Lumpur
期間13/11/1716/11/17

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  • 引用此

    Chen, Y., Yu, Z. I., Huang, C. Y., Hsieh, K. H., & Hu, S-I. (2018). Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. 於 I. Pasya (編輯), 2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings (頁 1250-1253). (Asia-Pacific Microwave Conference Proceedings, APMC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2017.8251687