Deposition of Silicon Carbide Thin Films from 1,1‐Dimethyl‐1‐Silacyclobutane

Hsin-Tien Chiu*, Shu‐Fen ‐F Lee

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

1,1‐Dimethyl‐1‐silacyclobutane was used as a single‐source precursor to deposit SiC thin films on Si(100) and Si(111) by low‐pressure chemical vapor deposition (LPCVD). Polycrystalline β‐SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X‐ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).

原文English
頁(從 - 到)293-297
頁數5
期刊Journal of the Chinese Chemical Society
39
發行號4
DOIs
出版狀態Published - 1 一月 1992

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