Depletion layer of gate poly-Si

Hiroshi Watanabe*

*Corresponding author for this work

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The depletion effects of gate poly-Si are investigated in detail taking into consideration the fact that many-body effects due to carrier-carrier and carrier-ion interactions are different at the surface than in a bulk of the gate poly-Si. All calculations are self-consistently performed including an incomplete ionization of activated impurities in an iterative manner. As a result, it is found that the surface part of these interactions affects the equivalent oxide thickness determined by the capacitance - voltage fitting, and that the bulk part affects the determination of flat band potential. It is also found that the surface of the gate poly-Si is incompletely depleted, and the depletion layer is then wider than calculated when assuming the complete depletion (N S /N D ). The width of the incomplete depletion layer is studied in detail for the first time.

原文English
頁(從 - 到)2265-2271
頁數7
期刊IEEE Transactions on Electron Devices
52
發行號10
DOIs
出版狀態Published - 1 十月 2005

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