摘要
The temperature coefficient of resistance (TCR) characteristics of Pt/(Ba0.8Sr0.2)TiO3 (BST)/Pt thin-film resistors are studied for the BST films with rapid thermal annealing (RTA) treatments. The polarizations induced by bias voltages greatly influence the TCR characteristics. The RTA-treated BST thin film exhibits negative TCR (NTCR) behavior at a negative voltage, but, intriguingly, positive TCR (PTCR) behavior at a positive voltage. According to the leakage current analysis, Schottky emission dominates the negatively biased current at the upper interface, but Heywang barrier scattering confines the positive biased current.
原文 | English |
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期刊 | Electrochemical and Solid-State Letters |
卷 | 6 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 四月 2003 |