Dependence of deep level concentrations on ammonia flow rate in n-type GaN films

L. Lee*, F. C. Chang, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen, B. R. Huang

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at EC-0.569±0.003 and EC-1.013±0.091 eV, were detected in this study. When the NH3 flow rate was increased, we observed a slight increase in trap concentration of the EC-0.569 eV defect and a significant increase at EC-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of EC-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.

原文English
頁(從 - 到)424-428
頁數5
期刊Chinese Journal of Physics
40
發行號4
出版狀態Published - 1 八月 2002

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