摘要
HfO 2 -based gate stacks with titanium (Ti) incorporated into a GeO x interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeO x through high temperature annealing.
原文 | English |
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文章編號 | 8579236 |
頁(從 - 到) | 174-176 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 40 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 1 二月 2019 |