Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology

Yun Yan Chung, Jia Min Shieh, Sheng Kai Su, Hung Li Chiang, Tzu Chiang Chen, Lain Jong Li, H. S.Philip Wong, Wen Bin Jian, Chao Hsin Chien*, Kuan Cheng Lu, Chao Ching Cheng, Ming Yang Li, Chao Ting Lin, Chi Feng Li, Jyun Hong Chen, Tung Yen Lai, Kai Shin Li

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS<sub>2</sub> Channel Directly Grown on SiO<sub>x</sub>/Si Substrates Using Area-Selective CVD Technology」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science