Degradation of N2O-annealed MOSFET characteristics in response to dynamic oxide stressing

James C. Chen*, Zhihong Liu, J. T. Krick, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The performance of n-MOSFET's with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2O-annealed devices compared with that for devices with OX. In addition, a smaller Vt shift for nitrided samples after stress was found. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both Gm and Dit revealed a 'peak' frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.

原文English
頁(從 - 到)225-227
頁數3
期刊IEEE Electron Device Letters
14
發行號5
DOIs
出版狀態Published - 1 五月 1993

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