Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

Hsiang Chen*, Kun Min Hsieh, Yun Yang He, Li Chen Chu, Ming Ling Lee, Kow-Ming Chang

*Corresponding author for this work

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

原文English
頁(從 - 到)7-10
頁數4
期刊Journal of New Materials for Electrochemical Systems
19
發行號1
DOIs
出版狀態Published - 1 一月 2016

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