Degradation and breakdown of W-La2O3 stack after annealing in N2

Joel Molina*, Alfonso Torres, Wilfrido Calleja, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W-La2O3 stacked structures. It is shown that the gate area of the metal-insulator-semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current-voltage (I-V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.

原文English
頁(從 - 到)7076-7080
頁數5
期刊Japanese journal of applied physics
47
發行號9 PART 1
DOIs
出版狀態Published - 12 九月 2008

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