Degradation and breakdown of W-La2O3 stack after annealing in N2

Joel Molina*, Alfonso Torres, Wilfrido Calleja, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)


We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W-La2O3 stacked structures. It is shown that the gate area of the metal-insulator-semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current-voltage (I-V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.

頁(從 - 到)7076-7080
期刊Japanese journal of applied physics
發行號9 PART 1
出版狀態Published - 12 九月 2008

指紋 深入研究「Degradation and breakdown of W-La<sub>2</sub>O<sub>3</sub> stack after annealing in N<sub>2</sub>」主題。共同形成了獨特的指紋。