An accurate drain current model for deep-submicrometers MOSFETs down to the Leff = 0.25 μm for digital as well as analog applications has been developed. The model is based on the recently improved physical understanding of deep-submicron MOS devices. Care has been taken to retain the basic functional from fully physical models while improving model accuracy and computational efficiency. The ease of parameter extraction was also a major consideration. In addition to the effects commonly included in the MOSFET current equation, the inversion-layer capacitance effect, hot-electron-induced output-resistance degradation, and source/drain parasitic resistance effect have been taken into account.
|頁（從 - 到）||114-117|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 十二月 1988|
|事件||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
持續時間: 11 十二月 1988 → 14 十二月 1988