Deep etch of GaP using high-density plasma for light-emitting diode applications

D. S. Wuu*, C. R. Chung, Y. H. Liu, Ray-Hua Horng, S. H. Huang

*Corresponding author for this work

研究成果: Conference article

6 引文 斯高帕斯(Scopus)

摘要

Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.

原文English
頁(從 - 到)902-908
頁數7
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號3
DOIs
出版狀態Published - 1 五月 2002
事件20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
持續時間: 1 十月 20013 十月 2001

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