Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.
|頁（從 - 到）||902-908|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 五月 2002|
|事件||20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States|
持續時間: 1 十月 2001 → 3 十月 2001