DC/RF Hysteresis in Microwave pHEMT Amplifier Induced by Gate CurrentDiagnosis and Elimination

Nai Chung Kuo*, Pin Sung Chi, Almudena Suárez, Jing Lin Kuo, Pin Cheng Huang, Zuo-Min Tsai , Huei Wang

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this paper, an $X$ -band pseudomorphic HEMT power amplifier (PA) is reported with two kinds of hysteresis phenomena; the first occurs in the dc-IV measurement, and the second is observed in the power measurement. The unusual phenomena can be attributed to the gate current resulting from the impact ionization coupling with the gate bias resistor, which is usually observed in the design of RF circuits to provide the gate bias. After the gate current is considered, two methods are proposed to analyze the hysteresis with the same conclusion. The cause of the encountered hysteresis is for the first time identified, and criteria for the selection of the gate bias resistor in order to avoid the hysteresis are proposed. Finally, a PA complying with these criteria is presented with good performances and without hysteresis.

原文English
文章編號5978235
頁(從 - 到)2919-2930
頁數12
期刊IEEE Transactions on Microwave Theory and Techniques
59
發行號11
DOIs
出版狀態Published - 1 十一月 2011

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