Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors

Emmanuel F. Crabbé, John D. Cressler, Gary L. Patton, Johannes M.C. Stork, James H. Comfort, Jack Y.C. Sun

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

We report the experimental observation of a novel effect in SiGe heterojunction bipolar transistors (HBT's) with graded bases which results in a significant emitter-base bias dependence of the current gain. The nonideal collector current is caused by the interaction of the bias dependence of the emitter-base space-charge region width and the exponential dependence of the collector current on the germanium concentration at the edge of the space-charge region. The resulting current gain rolloff must be taken into account for accurate modeling of bipolar transistors with bandgap grading in the base.

原文English
頁(從 - 到)193-195
頁數3
期刊IEEE Electron Device Letters
14
發行號4
DOIs
出版狀態Published - 四月 1993

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