Current gain increase of n-p-n transistors by electromigration of atomic hydrogen in emitter polysilicon

J. Zhao*, G. P. Li, K. Y. Liao, M. R. Chin, J. Y.C. Sun, T. Y. Chiu

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The current gain (β) increase of n-p-n transistors induced by forward current stress is investigated in this paper. The mechanism of β increase is identified as electromigration of atomic hydrogen in polysilicon by high density current, and its subsequent passivation of silicon dangling bonds at poly/monosilicon interface and poly grain boundaries. The hydrogen passivation results in a reduction of surface recombination velocity thus decreasing base current and increasing β. The effects of hydrogen in emitter poly must be taken into account if bipolar reliability is to be improved.

原文English
主出版物標題Annual Proceedings - Reliability Physics (Symposium)
發行者Publ by IEEE
頁面122-126
頁數5
ISBN(列印)0780307828, 9780780307827
DOIs
出版狀態Published - 1993
事件31st Annual Proceedings of the 1993 Reliability Physics - Atlanta, GA, USA
持續時間: 23 三月 199325 三月 1993

出版系列

名字Annual Proceedings - Reliability Physics (Symposium)
ISSN(列印)0099-9512

Conference

Conference31st Annual Proceedings of the 1993 Reliability Physics
城市Atlanta, GA, USA
期間23/03/9325/03/93

指紋 深入研究「Current gain increase of n-p-n transistors by electromigration of atomic hydrogen in emitter polysilicon」主題。共同形成了獨特的指紋。

引用此