Current density redistribution from no current crowding to current crowding in Pb-free solder joints with an extremely thick Cu layer

Jung Kyu Han*, Daechul Choi, Masaru Fujiyoshi, Nobuhiko Chiwata, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

In order to remove the effect of current crowding on electromigration, thick Cu under-bump metallization has been widely adopted in the electronics industry. Three-dimensional (3-D) integrated circuits, using through Si via Cu column interconnects, is being developed, and it seems that current crowding may not be a reliability issue. However, statistical experiments and 3-D finite element simulation indicate that there is a transition from no current crowding to current crowding, caused by void growth at the cathode. An analysis of the electromigration-induced failure mechanism in solder joints having a very thick Cu layer is presented. It is a unique failure mechanism, different from that in flip chip technology. Moreover, the study of marker displacement shows two different stages of drift velocity, which clearly demonstrates the back-stress effect and the development of compressive stress.

原文English
頁(從 - 到)102-111
頁數10
期刊Acta Materialia
60
發行號1
DOIs
出版狀態Published - 1 一月 2012

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